Electronics Engineering Abstracts
FinFET Technology
The term FinFET was coined by University of California, Berkeley researchers (Profs. Chenming Hu, Tsu-Jae King-Liu and Jeffrey Bokor) to describe a nonplanar, double-gate transistor built on an SOI substrate, based on the earlier DELTA (single-gate) transistor design.The distinguishing characteristic of the FinFET is that the conducting channel is wrapped by a thin silicon "fin", which forms the body of the device. The thickness of the fin (measured in the direction from source to drain) determines the effective channel length of the device.In current usage the term FinFET has a less precise definition. Among microprocessor manufacturers, AMD, IBM, and Motorola describe their double-gate development efforts as FinFET development whereas Intel avoids using the term to describe their closely related tri-gate architecture. In the technical literature, FinFET is used somewhat generically to describe any fin-based, multigate transistor architecture regardless of number of gates.
A 25-nm transistor operating on just 0.7 Volt was demonstrated in December 2002 by Taiwan Semiconductor Manufacturing Company. The "Omega FinFET" design is named after the similarity between the Greek letter omega (Ω) and the shape in which the gate wraps around the source/drain structure. It has a gate delay of just 0.39 picosecond (ps) for the N-type transistor and 0.88 ps for the P-type.FinFET can also have two electrically independent gates, which gives circuit designers more flexibility to design with efficient, low-power gates.In 2012, Intel has started using FinFETs for its future commercial devices. Although, recent leaks suggest that Intel's FinFET shape has an unusual shape of a triangle rather than a rectangular. It is speculated that this might be due to the fact that triangle has a higher structural strength and can be more reliably manufactured.In September 2012, GlobalFoundries announced plans to offer a 14-nanometer process technology featuring FinFET three-dimensional transistors in 2014.[14] The next month, the rival company TSMC, announced start early or "risk" production of 16 nm FinFETS in November 2012. More applications of FinFET is expected in 2013
Multigate devices (MuGFET and MIGFET)
A multigate device or multiple gate field-effect transistor (MuGFET) refers to a MOSFET (metal–oxide–semiconductor field-effect transistor) which incorporates more than one gate into a single device. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a Multiple Independent Gate Field Effect Transistor (MIGFET). Multigate transistors are one of several strategies being developed by CMOS semiconductor manufacturers to create ever-smaller microprocessors and memory cells, colloquially referred to as extending Moore's Law.Development efforts into multigate transistors have been reported by AMD, Hitachi, IBM, Infineon Technologies, Intel Corporation, TSMC, Freescale Semiconductor, University of California, Berkeley and others and the ITRS predicts that such devices will be the cornerstone of sub-32 nm technologies.The primary roadblock to widespread implementation is manufacturability, as both planar and non-planar designs present significant challenges, especially with respect to lithography and patterning. Other complementary strategies for device scaling include channel strain engineering, silicon-on-insulator-based technologies, and high-k/metal gate materials.
Dual gate MOSFETs are commonly used in VHF mixers and in sensitive VHF front end amplifiers. They are available from manufacturers such as Motorola, NXP, and Hitachi.
Modern tetrode transistors
A tetrode transistor is any transistor having four active terminals.Modern tetrode transistors include Dual emitter transistor, used in two input transistor-transistor logic gates.;Dual collector transistor, used in two output integrated injection logic gates.;Diffused planar silicon bipolar junction transistor,\used in some integrated circuits. This transistor, apart from the three electrodes, emitter, base and collector, has a fourth electrode or grid made of conducting material placed near the emitter-base junction from which it is insulated by a silica layer.;Field effect transistors having two gates.
Tri-Gate Transistor or 3-D Transistor
Tri-gate or 3-D Transistor (not to be confused with 3D microchips) fabrication is used by Intel Corporation for the nonplanar transistor architecture used in Ivy Bridge processors. These transistors employ a single gate stacked on top of two vertical gates allowing for essentially three times the surface area for electrons to travel. Intel reports that their tri-gate transistors reduce leakage and consume far less power than current transistors. This allows up to 37% higher speed, or a power consumption at under 50% of the previous type of transistors used by Intel
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